Source: USCi Blog

USCi Blog Using Kelvin connections to enhance switching efficiency in SiC FETs

By Dr. Anup Bhalla, VP Engineering at UnitedSiC Physics both gives and takes away. Devices built with materials that exhibit wide band-gaps, such as silicon carbide (SiC), offer designers the gift of transistors that can sustain high power densities thanks to their combination of low conduction and switching losses, high operating junction temperatures and

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Christopher Dries's photo - President & CEO of UnitedSiC

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Christopher Dries

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87/100

UnitedSiC develops and manufactures silicon carbide FET and diode power semiconductors for electric vehicles and DC conv... Read more