Power semiconductor design house MinDCet of Leuven, Belgium has introduced the gallium nitride (GaN)-based MDC901-EVKHB half-bridge evaluation kit, which is based on the MinDCet MDC901 GaN gate driver and two GS61008P enhancement-mode (E-mode) GaN high-electron-mobility transistors (HEMTs) from GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications)...
