Infineon: Infineon Introduces CoolSiC MOSFET 750 V G2 for Enhanced Efficiency and Power Density Across Automotive and Industrial Sectors

Infineon Technologies AG has unveiled its latest CoolSiC MOSFET 750 V G2 technology, engineered to significantly boost system efficiency and increase power density in both automotive and industrial power conversion systems. This new generation of CoolSiC MOSFETs provides a comprehensive portfolio featuring typical RDS(on) values as low as 60 mΩ at 25°C, making it highly versatile for various applications. These include on-board chargers (OBCs), DC-DC converters, and auxiliary systems in electric vehicles (xEVs), along with industrial uses such as EV charging infrastructure, solar inverters, energy storage systems, telecom power supplies, and switch-mode power supplies (SMPS). Offering ultra-low RDS(on) options of 4 and 7 mΩ, the 750 V G2 MOSFETs excel in static-switching applications. This makes them particularly well-suited for roles such as electronic fuses (eFuses), high-voltage battery disconnect systems, solid-state circuit breakers, and solid-state relays. Infineon's innovative Q-DPAK package, featuring a top-side cooled design, houses the industry's lowest RDS(on) value of 4 mΩ, delivering exceptional thermal performance and enhanced reliability. The technology also showcases superior performance with excellent RDS(on) × QOSS and leading-edge RDS(on) × Qfr metrics, effectively reducing switching losses in both hard- and soft-switching topologies. These improvements lead to greater efficiency in hard-switching use cases. Additionally, the reduced gate charge supports faster switching speeds and lowers gate drive losses, positioning the devices as ideal for high-frequency operations. CoolSiC MOSFET 750 V G2 also incorporates a high threshold voltage VGS(th),typ of 4.5 V at 25°C and an ultra-low QGD/QGS ratio, which together enhance immunity to parasitic turn-on (PTO). The devices support extended gate driving capability, withstanding static gate voltages down to -7 V and transient gate voltages down to -11 V. These characteristics provide engineers with broader design margins and compatibility with a wider array of system components. Delivering exceptional switching behavior, user-friendliness, and reliability, the CoolSiC 750 V G2 adheres strictly to automotive -grade AEC Q101 and industrial-grade JEDEC standards. This ensures dependable performance in safety-critical environments while supporting more compact, cost-effective, and efficient system designs to meet the demands of rapidly evolving markets. Samples of Infineon's CoolSiC MOSFET 750 V G2 in Q-DPAK packages with 4, 7, 16, 25, and 60 mΩ RDS(on) ratings are now available for order. Infineon at PCIM Europe 2025 From May 6-8, 2025, Infineon will showcase its latest technologies supporting decarbonization and digitalization at PCIM Europe in Nuremberg, Germany, at hall 7, booth #470. The company's experts will also be participating in various stage presentations and the PCIM Conference, offering insights followed by speaker Q&A sessions.