Alpha and Omega Semiconductor Limited introduced its AOPL66801 80V MOSFET in a half-bridge configuration available in a DFN6x5 AmpStack MOSFET package. This packaging technology enables high-density designs for various power conversion applications, ranging from next-gen Megawatt AI factories to everyday power tools. Designed to support high power-density requirements, AOS? new, advanced packaging uses vertically stacked die technology with two MOSFETs connected as a high-side and low-side MOSFET, forming a half-bridge. This configuration effectively increases power density and maximizes available PCB space compared to a two DFN5x6 discrete MOSFET solution. The AOPL66801 also features an optimized clip design for the switch node connecting the two MOSFETs, which minimizes parasitic inductance between the high-side and low-side MOSFETs. Compared to a standard discrete solution, the AOPL66801 minimizes parasitic inductance on the PCB, reducing phase-node voltage ringing and decreasing stress on the MOSFET. The PCB layout can affect gate-driving performance and degrade switching performance due to parasitic inductance. The AOPL66801 has a Kelvin sense pin that maintains gate-voltage stability during large di/dt switching and provides a more effective drive path for the high side, reducing losses. In addition, AOPL66801 has a maximum junction temperature of 175 °C, providing increased capability. These factors provide significant system-level improvements that support higher power density and increased operational efficiencies. Part Number: AOPL66801, Package: DFN 6x5, High Side (Q1): VDS (V) 80, VGS (±V) 20, RDS(ON) (mO max) at VGS=10V: 2.2, ID (A): 304, Ciss (pF): 4900, Coss (pF): 1400, Crss (pF): 34, Qg (nC): 70; Low Side (Q2): VDS (V) 80, VGS (±V) 20, RDS(ON) (mO max) at VGS=10V: 2.2, ID (A): 215, Ciss (pF): 4900, Coss (pF): 1400, Crss (pF): 34, Qg (nC): 70. The AOPL66801 is immediately available in production quantities, with a 16-week lead time. The unit price in 1,000-piece quantities is $6.16.
AOS is a California-based semiconductor company that manufactures products including power ICs and silicon carbides for industries such as automotive and telecommunication.